10th-generation QLC 3D flash memory represents a major leap forward for AI storage architectures, cloud platforms, and data‑intensive innovations
(BUSINESS WIRE)--Future of Memory and Storage Conference (FMS) – Kioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A) and Sandisk Corporation (Nasdaq: SNDK) today unveiled their next-generation Quad-Level-Cell (QLC) 3D flash memory technology, which delivers up to 60% increase in bit density compared to their 8th-generation, surpassing 37 Gb/mm² and setting the industry benchmark1 for bit density, performance and power efficiency.
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Leveraging the companies’ revolutionary CMOS directly Bonded to Array (CBA) technology2 which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment, the new generation improves
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